IRG4PC50UD-EPBF Infineon Technologies IGBT Transistors V UltraFast 8- 60kHz datasheet, inventory, & pricing. IRG4PC50UD Transistor Datasheet, IRG4PC50UD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog. IRG4PC50UD datasheet, IRG4PC50UD circuit, IRG4PC50UD data sheet: IRF – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT.

Author: Juramar Grobei
Country: Bermuda
Language: English (Spanish)
Genre: Automotive
Published (Last): 12 January 2013
Pages: 327
PDF File Size: 12.18 Mb
ePub File Size: 11.7 Mb
ISBN: 293-9-37781-924-7
Downloads: 24853
Price: Free* [*Free Regsitration Required]
Uploader: Dujind

IRG4PC50UD IRF Insulated Gate Bipolar Transistor ChipFind Datasheet Archive |

Diode Peak Rate of Fall of Recovery. Diode Peak Reverse Recovery Current. Diode Reverse Recovery Time. Data and specifications subject to change without notice. T Pulse width 5. Generation 4 IGBT design provides tighter. T JJunction Temperature? Designed to be a “drop-in” replacement for equivalent.

Total Gate Charge turn-on. Mounting Torque, or Irg4pc50d Screw. Clamped Inductive Load Current R. Du ty c ycle: Diode Forward Voltage Drop. Clamped Inductive Load Test. V CE on dataxheet.


Macro Waveforms for Figure 18a’s Test Circuit. Gate – Emitter Charge turn-on. Diode Continuous Forward Current. Clamped Inductive Load Current R. Generation 4 IGBT design provides tighter. Visit us at www. Diode Reverse Recovery Charge. Junction-to-Ambient, typical socket mount. C unless otherwise specified.

D im en sion s in M illim eters a nd Inches. Tu rn -on lo sses inclu de. Gate – Collector Charge turn-on.

IRG4PC50UD IGBT. Datasheet pdf. Equivalent

C unless otherwise specified. Case-to-Sink, flat, greased surface.

Pulsed Collector Current Q. Generation 4 IGBT’s offer highest efficiencies. Energy losses include “tail” and. Gate – Collector Charge turn-on. Clamped Inductive Load Test. Tu rn -on lo sses inclu de.

Minimized recovery characteristics require. Q gTotal Gate Charge nC.

IRG4PC50UD Datasheet

Q gTotal Gate Charge nC. IGBT’s optimized for specific application conditions. T JJunction Temperature?

Optimized for high operating. Pulsed Collector Current Q. Energy losses include “tail” and. Mounting Torque, or M3 Screw. Diode Forward Voltage Drop. Ga te d rive a s spe cified. Macro Waveforms for Figure 18a’s Test Circuit. Soldering Temperature, for 10 sec. Total Gate Charge turn-on.


V CE on typ. Measured 5mm from package.